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Problems with silicon carbide power semiconductors

wallpapers Tech 2021-01-04
Although the application prospects of silicon carbide power devices are broad, they are currently limited by factors such as high prices. So far, the market size is not large and the application range is not wide, mainly concentrated in photovoltaics, power supplies and other fields. The main problems in the application of silicon carbide devices are:
 
The drive technology of silicon carbide power devices is not yet mature
In order to give full play to the high-frequency and high-temperature characteristics of silicon carbide power devices, the driver chip is required to have the characteristics of high operating temperature, large drive current and high reliability. At present, the drive chip continues to use the drive technology of the silicon device, which still cannot meet the requirements.
 
The protection technology of silicon carbide power devices is not perfect
Silicon carbide power devices have the characteristics of fast switching frequency and short short-circuit time, and the current device protection technology cannot meet the demand.
 
The circuit application switching model of silicon carbide devices cannot fully reflect the switching characteristics of silicon carbide power devices, and it cannot provide accurate guidance for the circuit topology simulation design of silicon carbide devices. The electromagnetic compatibility problem in the application of silicon carbide power devices has not been completely resolved.
 
The circuit topology of silicon carbide power device applications is not yet optimized
At present, the application circuit topology of silicon carbide power devices basically follows the circuit topology of silicon devices, and no new circuit topology structure that fully utilizes the advantages of silicon carbide power devices has been developed.
 
On the whole, the third-generation semiconductor technology is still in a state of development, and there are many shortcomings. Taking the most widely used silicon carbide as an example, there are still several technical defects:
 
Material costs are too high
At present, the process of silicon carbide chips is not as mature as silicon, mainly 4-inch wafers, the utilization rate of materials is not high, and the wafers of Si chips have already developed to 12 inches. Specifically, for products with the same specifications, the overall price of silicon carbide devices is 5-6 times that of silicon devices.
 
High-temperature loss is too large
Although silicon carbide devices can operate at high temperatures, their high power loss under high-temperature conditions largely limits their applications, which runs counter to the original purpose of device development.
 
Packaging technology lags behind
At present, the sealing technology used in silicon carbide modules still follows the design of silicon modules, and its reliability and lifespan cannot meet the requirements of its operating temperature.

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